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Gallium Nitride (GaN) Semiconductor Device Market

Gallium Nitride (GaN) Semiconductor Device Market Trends, Opportunity, and Forecast Analysis, 2024-2033

Gallium Nitride (GaN) Semiconductor Device Market revenue to generate USD 16.2 billion by 2033, according to KDMI analyst’s growth analysis. The market is segmented by Product, Component, Wafer Size, Application, End-Use and by region.

Gallium Nitride (GaN) Semiconductor Device Market Size Survey Report – In a Glance

As per the survey report on global Gallium Nitride Semiconductor Device Market, the market is projected to foresee a CAGR of 22.9% between 2024-2033, and further generate a market size of USD 16.2 billion revenue by the end of 2033. In the year 2024, the market size was valued at USD 2.8 billion revenue.

  • The global Gallium Nitride (GaN) Semiconductor Device Market is projected to grow on account of increasing smartphone and laptop usage.
  • In Japan, the growth of information and communication technology industry can be attributed to the growth in the Gallium Nitride (GaN) Semiconductor Device Market.
  • KDMI analyst’s growth analysis foresees high cost of bulk Gallium Nitride (GaN) compliance to challenge the market growth.
  • North America, having the highest market share in the Gallium Nitride (GaN) Semiconductor Device Market, is projected to dominate the global market.

Gallium Nitride (GaN) Semiconductor Device Market Analysis

Gallium Nitride (GaN) is a mechanically stable, very hard, binary III/V direct bandgap semiconductor with higher breakdown strength, higher thermal conductivity, faster switching speed & lower on-resistance and power devices depending on GaN considerably outdo silicon-depended devices. Advancements in genetic engineering technology are a significant growth driver in the Gallium Nitride (GaN) semiconductor device market. The increasing use of smartphones and laptops is a growth driver of the Gallium Nitride (GaN) semiconductor device market. The increased requirement for batteries with higher capacity and demand for quicker charging are pushing the demand for chargers with higher outputs, enhanced efficiency and more compact designs. GaNFast power ICs are leading a transformative transition in ultra-fast and rapid charging across several mobile devices such as tablets, laptops and smartphones. The number of fast chargers increased by 330000 worldwide as of 2022 and the majority of the demand was from regions, such as China. Wolfspeed, Inc. Qorvo, Inc., MACOM Technology and Solutions Holdings, Inc. are significant players in the global Gallium Nitride (GaN) Semiconductor Device market.


Analyst’s Observation on Japan Gallium Nitride (GaN) Semiconductor Device Market Survey

The broadband gap technology enables the device to function at higher temperatures and higher voltages than silicon without breaking. It is a semiconductor material that amplifies high-power radio frequency signals effectively at microwave frequencies to improve a system’s range. Its increased demand in the ICT industry is propelling the growth of the Japanese Gallium Nitride (GaN) Semiconductor Device Market. Japan has one of the highest degrees of information and communication technology in the world and a proven track record in this segment. Japan provides multifaceted support for several countries’ ICT development because it has a complete capacity for ICT advancement. ICT has an impressive influence on economic growth, and its contribution rate to the Japanese GDP growth has reached 40%. Sumitomo Electric Industries, Ltd. is one significant player in the Japanese Gallium Nitride (GaN) Semiconductor Device market.

Gallium Nitride (GaN) Semiconductor Device Market: Report Scope

Base Year

     2023

Estimated Market Size

     USD 2.8 Billion in 2024

Forecast Year

     2024-2033

Projected Market Size

     USD 16.2 Billion in 2033

CAGR Value

    22.9%

Gallium Nitride (GaN) Semiconductor Device Market Key Trends/Major Growth Drivers

  • Increasing use of solar inverters
  • Increasing adoption of IoT     

Restraint Factors

  • High cost of bulk Gallium Nitride (GaN)
  • High technological advancement     

Gallium Nitride (GaN) Semiconductor Device Market Segmentation

  • By Product
  • By Component
  • By Wafer Size
  • By Application
  • By End-Use
  • By Geography

Fastest Growing Region

  • Asia Pacific, is the fastest growing region in the Gallium Nitride (GaN) Semiconductor Device Market during the forecast period

Gallium Nitride (GaN) Semiconductor Device Market Key Players

Wolfspeed, Inc., Qorvo, Inc., MACOM Technology Solutions Holdings, Inc., Infineon Technologies AG, Sumitomo Electric Industries, Ltd., Navitas Semiconductor, Mitsubishi Electric, Epistar Corporation, Cree, Inc., Transphorm, Inc, and Others


Gallium Nitride (GaN) Semiconductor Device Market Growth Driver & Market Restraint

Growth Driver

Increasing use of solar inverters:

Gallium Nitride (GaN) semiconductor devices are significant in solar designs due to their capacity to provide highly enhanced performance while minimizing the physical space and energy required to distribute that performance when compared with traditional silicon. The use of solar inverters is increasing at a high rate due to the expanded use of Solar PV. It comprised approximately 45% of comprehensive electricity generation investment as of 2022, triple the investment on every other fossil fuel technology. Solar PV claimed about 2/3rd of all novel renewable power capacity installed in the previous year and the highest expansion rate in terms of electricity production. Power generation from solar PV expanded by a record 270 TWh in 2022, an increase of 26% as of 2021. Solar PV registered for 4.5% of the total worldwide electricity production, and it remains the 3rd largest renewable technology, following wind & hydropower. The increasing use of solar PV is inducing the market of solar inverters, ultimately propelling the Gallium Nitride (GaN) semiconductor device market.

Market Restraint

High cost of bulk gallium nitride:

GaN, at present is quite expensive, costing approximately USD 1900 for a 2-inch substrate when compared to silicon substrate, which costs between USD 25 to USD 50 for a 6-inch substrate, the price of GaN is much higher. The high manufacturing cost leads to the high price of bulk GaN. The hydride vapour phase epitaxy and ammonothermal methods utilized to make GaN are more expensive to manufacture than silicon substrates.


Gallium Nitride (GaN) Semiconductor Device Market Segmentation

Our experts at KD Market Insights have segmented the global Gallium Nitride (GaN) Semiconductor Device Market research report as:

By Product

  • GaN Radio Frequency Devices
  • Opto-semiconductors
  • Power Semiconductors
  • Others

By Component

  • Power IC
  • Transistor
  • Rectifier
  • Diode
  • Others

By Wafer Size

  • 2-inch
  • 4-inch
  • 6-inch
  • 8-inch
  • Others

By Application

 

  • Lighting & Lasers
  • Power Drives
  • Supplies & Inverters
  • Radio Frequency
  • Others

By End-Use

  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Healthcare
  • Industrial & Power
  • Information & Communication Technology
  • Others

By Region

  • North America
    • U.S.
    • Canada
  • Europe
    • U.K.
    • Germany
    • France
    • Italy
    • Spain
    • Russia
    • Rest of Europe
  • Asia-Pacific
    • Japan
    • China
    • India
    • Indonesia
    • Malaysia
    • Australia
    • Rest of Asia-Pacific
  • Latin America
    • Mexico
    • Argentina
    • Rest of Latin America
  • Middle East and Africa

Gallium Nitride (GaN) Semiconductor Device Market Regional Synopsis

North America is expected to dominate the Gallium Nitride (GaN) semiconductor device market due to increased spending from the aerospace and defence industry. The GaN technology has an essential role in enhancing the efficiency & effectiveness of defence functions, ranging from developed radar to communication systems. The United States defence industry depends highly on GaN semiconductor technology for developing radar mechanisms and other applications. It is utilized in forthcoming 6G wireless and 5G infrastructure because of its high-frequency performance capacities. Aerospace systems also use Gallium Nitride (GaN) for power conversion, and the expanding United States aerospace sector is another growth driver of the Gallium Nitride (GaN) semiconductor device market. As of 2023, the United States aerospace & defence sector reached a milestone of producing around USD 955 billion in sales, a 7.1% upsurge since the last year. The increased demand for smart home devices propels the Gallium Nitride (GaN) semiconductor device market. GaN is increasingly applied to smart home appliances as it functions at higher frequencies, voltages and temperatures. Smart home statistics indicate that as of 2024, 69.9 million US households are expected to use smart home devices dynamically.

Asia Pacific is expected to be the fast-growing market for Gallium Nitride (GaN) semiconductor devices due to the high demand for electric vehicles. In China, the number of novel electric car registrations was approximately 8.1 million in 2023, expanding by 35% since 2022. In 2024, the market share of electric cars in China reached 45% due to increasing competitiveness among the producers, the falling car & battery prices and continuous policy aid. Similarly, in India, around 50% of 3-wheelers, 5% of the 2-wheelers and 2% of the cars bought as of 2024 were electric vehicles. The Indian electric vehicle market is on the verge of becoming the largest EV market by 2030, with an increase in investment over the subsequent 8 to 10 years. As of 2024, the comprehensive number of electric vehicles bought in South Korea surpassed 500000 in the previous year. GaN semiconductor device helps power conversions for renewable energy sources, enhancing the dependability & efficiency of such systems. The increased spending on renewable energy projects and the focus on minimizing carbon emissions drive the demand for GaN semiconductor devices. Between 2019 and 2024, China will register for about 40% of the worldwide renewable capacity growth, propelled by lower rates of curtailment and enhanced system integration. Under current investment patterns and policies, the proportion of contemporary renewables in the energy mix of China will increase by 16% by 2030.

Regional Company Names

  • Qorvo, Inc.
  • Wolfspeed, Inc
  • MACOM Technology Solutions Holdings, Inc.

Gallium Nitride (GaN) Semiconductor Device Market Competitive Landscape

Some of the key players who top the global Gallium Nitride (GaN) Semiconductor Device Market share:

  • Wolfspeed, Inc.
  • Qorvo, Inc.
  • MACOM Technology Solutions Holdings, Inc.
  • Infineon Technologies AG
  • Sumitomo Electric Industries, Ltd.
  • Navitas Semiconductor
  • Mitsubishi Electric
  • Epistar Corporation
  • Cree, Inc.
  • Transphorm, Inc

  1. Executive Summary
    1. Market Overview
    2. Key Findings
    3. Market Trends
    4. Market Outlook
  2. Introduction
    1. Scope of the Report
    2. Research Methodology
    3. Definitions and Assumptions
    4. Acronyms and Abbreviations
  3. Market Dynamics
    1. Drivers
    2. Restraints
    3. Opportunities
    4. Challenges
  4. Global Gallium Nitride (GaN) Semiconductor Device Market
    1. Market Overview
    2. Market Size and Forecast
    3. Market Segmentation
      1. By Product
      2. By Component
      3. By Wafer Size
      4. By Application
      5. By End-Use
      6. By Region
  5. Market Segmentation by Product
    1. GaN Radio Frequency Devices
    2. Opto-semiconductors
    3. Power Semiconductors
    4. Others
  6. Market Segmentation by Component
    1. Power IC
    2. Transistor
    3. Rectifier
    4. Diode
    5. Others
  7. Market Segmentation by Wafer Size
    1. 2-inch
    2. 4-inch
    3. 6-inch
    4. 8-inch
    5. Others
  8. Market Segmentation by Application
    1. Lighting & Lasers
    2. Power Drives
    3. Supplies & Inverters
    4. Radio Frequency
    5. Others
  9. Market Segmentation by End-Use
    1. Automotive
    2. Consumer Electronics
    3. Defense & Aerospace
    4. Healthcare
    5. Industrial & Power
    6. Information & Communication Technology
    7. Others
  10. Regional Analysis
    1. North America
      1. United States
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use   
      2. Canada
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      3. Mexico
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
    2. Europe
      1. United Kingdom
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      2. Germany
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      3. France
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      4. Italy
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      5. Spain
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      6. Rest of Europe
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
    3. Asia Pacific
      1. China
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      2. Japan
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      3. India
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      4. Australia
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      5. South Korea
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      6. Rest of Asia Pacific
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
    4. Latin America
      1. Brazil
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      2. Argentina
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      3. Colombia
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      4. Rest of Latin America
        1. Market Size and Forecast
        2. Key Trends and Developments
        3.               Market Analysis by Product, Component, Wafer Size, Application and End-Use    
    5. Middle East & Africa
      1. South Africa
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      2. Saudi Arabia
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      3. UAE
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
      4. Rest of Middle East & Africa
        1. Market Size and Forecast
        2. Key Trends and Developments
        3. Market Analysis by Product, Component, Wafer Size, Application and End-Use    
  11. Competitive Landscape
    1. Market Share Analysis
    2. Company Profiles
      1. Wolfspeed, Inc.
      2. Qorvo, Inc.
      3. MACOM Technology Solutions Holdings, Inc.
      4. Infineon Technologies AG
      5. Sumitomo Electric Industries, Ltd.
      6. Navitas Semiconductor
      7. Mitsubishi Electric
      8. Epistar Corporation
      9. Cree, Inc.
      10. Transphorm, Inc
      11. Others
  12. Strategic Recommendations
  13. Appendix
    1. List of Tables
    2. List of Figures
  14. References

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Booklet
  • Publication date: February 2025
  • Base year: 2023
  • Forecast year: 2024-2033
  • Format: PDF, PPT,Word,Excel

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Frequently Asked Questions(FAQ)

The global Gallium Nitride (GaN) Semiconductor Device Market is expected to cross a value of USD 16.2 billion by the end of 2033.

The global Gallium Nitride (GaN) Semiconductor Device Market was valued at USD 2.8 billion in 2024.

Over the mid-term, increasing smartphone and laptop usage, is the primary factor anticipated to drive the global Gallium Nitride (GaN) Semiconductor Device Market.

The global Gallium Nitride (GaN) Semiconductor Device Market is segmented by Product, Component, Wafer Size, Application, End-Use and by geography.

North America, having the highest Share in the Gallium Nitride (GaN) Semiconductor Device Market is projected to dominate the global market in 2033.

Some of the key players in the Gallium Nitride (GaN) Semiconductor Device Market include Wolfspeed, Inc., Qorvo, Inc., MACOM Technology Solutions Holdings, Inc., Infineon Technologies AG, Sumitomo Electric Industries, Ltd., Navitas Semiconductor.

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